BSP298 E6327

BSP298 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 Pin 2 G D Type VDS ID RDS(on) Package Marking BSP298 400 V 0.5 A 3Ω PG-SOT223 BSP298 Type BSP298 Pb-free Yes Pin 3 Pin 4 S D Tape and Reel Information Packaging L6327 Dry Maximum Ratings Parameter Symbol Continuous drain current ID TA = 26 °C Values Unit A 0.5 DC drain current, pulsed IDpuls TA = 25 °C 2 Avalanche energy, single pulse mJ E AS ID = 1.35 A, VDD = 50 V, RGS = 25 Ω L = 125 mH, Tj = 25 °C 130 Gate source voltage V GS Power dissipation P tot TA = 25 °C V W 1.8 ESD Class Class 1b JESD22-A114-HBM Rev. 2.5 ± 20 1 2008-03-25 BSP298 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 Unit °C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage 400 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 400 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 400 V, V GS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 0.5 A Rev. 2.5 nA IGSS - 2 2.2 3 2008-03-25 BSP298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 0.5 A Input capacitance 0.5 pF - 300 400 - 50 75 - 20 30 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 1.2 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time - 10 15 - 25 40 - 30 40 - 20 30 tr V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rev. 2.5 3 2008-03-25 BSP298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 °C Inverse diode direct current,pulsed - 2 V 0.95 1.2 ns trr - 300 µC Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.5 - - V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 0.5 V SD V GS = 0 V, IF = 1 A, Tj = 25 °C Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage - - 4 2.5 - 2008-03-25 BSP298 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.55 W A 1.6 ID 0.45 0.40 1.4 0.35 1.2 0.30 1.0 0.25 0.8 0.20 0.6 0.15 0.4 0.10 0.2 0.05 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev. 2.5 5 2008-03-25 BSP298 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C l 1.2 10 Ptot = 2W j f ih d ge kc A Ω b VGS [V] 1.0 ID 0.9 0.8 0.7 0.6 a 0.5 0.4 0.3 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) a 8 7 6 5 4 b 3 l 2 d figc ke jh 0.2 1 0.1 0.0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 0 0 1 2 3 4 5 6 7 8 V 10 0.00 0.10 0.20 0.30 0.40 VDS Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, 2.6 2.6 A S 2.2 D 0.60 2.2 g 2.0 fs 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 1 2 3 4 5 6 7 8 V V Rev. 2.5 A ID Typ. transfer characteristics ID = f(VGS) I k l 10.0 20.0 10 0.0 0.4 0.8 1.2 1.6 A 2.2 I GS D 6 2008-03-25 BSP298 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.5 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 7.5 4.6 Ω V 6.5 4.0 RDS (on) 6.0 VGS(th) 98% 3.6 5.5 typ 3.2 5.0 2.8 4.5 4.0 2.4 98% 2% 3.5 2.0 3.0 typ 2.5 1.6 2.0 1.2 1.5 0.8 1.0 0.4 0.5 0.0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 10 1 nF A IF C 10 0 10 0 C iss 10 -1 10 -1 Tj = 25 °C typ Tj = 150 °C typ C oss Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 -2 0 5 10 15 20 25 30 V V Rev. 2.5 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD DS 7 2008-03-25 BSP298 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.35 A, VDD = 50 V RGS = 25 Ω, L = 125 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 140 480 mJ V 120 EAS 460 V(BR)DSS 450 110 100 440 90 80 430 70 420 60 410 50 400 40 390 30 380 20 370 10 0 20 360 40 60 80 100 120 °C 160 -60 Tj -20 20 60 100 °C 160 Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Rev. 2.5 8 2008-03-25 BSP298 Package outlines SOT-223 Dimensions in mm Rev. 2.5 9 2008-03-25 BSP298 Rev. 2.5 10 2008-03-25